Solve the form of Poisson’s equation derived in Part e using an integrating factor equal to…

(i) Solve the form of Poisson’s equation derived in Part e using an integrating factor equal to 2dutdx which multiplies both sides of the equation so that the left-hand side becomes a perfect differential for

/tiny ler,) = E2

(ii) Show that the field in the silicon at the silicon-silicon dioxide interface E., where um,, is

kT 4 — UR) qLDE Where the positive sign is used if (us-us)>0 and the negative sign is used if (un-u,)° corresponds to accumulation of the surface and (ua-us)-us). Make the range of us be from —20 to +20. Identify the flat-band voltage and conventional threshold voltage on your plot. [Problems g and h provide the basis for an exact treatment of subthreshold currents because Poisson’s equation fully specifies the surface space change.] (10)

Attachments:

"Is this question part of your assignment? We can help"

ORDER NOW